高效非准静态mosfet电路仿真模型

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.499372

E. Dubois, E. Robilliart

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引用次数: 7

摘要

用泊松方程和电流连续性方程的快速数值解析方法模拟了MOS电路在快速开关条件下的非准静态效应。由此产生的模型在所有操作制度下都是连续的，并解释了通道电荷的非瞬时再分配。通过对电流模式模拟电路的仿真，证明了这种建模方法的能力。

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Efficient non-quasi-static MOSFETs model for circuit simulation

A fast numerical resolution of the Poisson and current continuity equations is used to model non-quasi-static effects in MOS circuits under fast switching conditions. The resulting model is continuous over all regimes of operation and accounts for the non-instantaneous redistribution of the channel charge. The capabilities of this modelling approach are exemplified through the simulation of current mode analog circuits.

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Proceedings of International Electron Devices Meeting

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