CMOS成像仪生产测试中水平fpn故障覆盖率的提高

R. Fei, Jocelyn Moreau, S. Mir, Alexis Marcellin, C. Mandier, E. Huss, G. Palmigiani, P. Vitrou, Thomas Droniou
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引用次数: 3

摘要

目前CMOS成像仪传感器的生产测试主要是通过特殊算法对图像进行处理,捕获图像并检测故障。鉴于质量要求,这种昂贵的光学测试的故障覆盖率是不够的。对大批量生产的设备的研究表明,水平固定模式噪声(HFPN)是出现故障覆盖问题的产品上常见的图像故障之一,这是许多产品客户退货的主要原因。对故障器件的详细分析表明,HFPN故障是由像素寻址解码器中的电子电路拓扑或像素供电和控制所需的金属线的变化引起的。这些变化通常是由于斑点缺陷的存在,导致一行中的一些像素操作不正确,导致HFPN故障。此外,在有限的工业测试条件下,导致金属线部分退化的缺陷可能不会导致图像失效,从而通过光学测试。随后,这些缺陷可能会在现场产生成像故障,要么是因为捕获条件更加严格,要么是因为缺陷会由于电迁移而演变成灾难性故障。本文首先对HFPN检测算法进行了改进,以提高光学检测的故障覆盖率。其次,提出了一种内置自检结构,用于在片上检测像素电源和控制线中的灾难性和非灾难性缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Horizontal-FPN fault coverage improvement in production test of CMOS imagers
Current production testing of CMOS imager sensors is mainly based on capturing images and detecting failures by image processing with special algorithms. The fault coverage of this costly optical test is not sufficient given the quality requirements. Studies on devices produced at large volume have shown that Horizontal Fixed Pattern Noise (HFPN) is one of the common image failures encountered on products that present fault coverage problems, and this is the main cause of customer returns for many products. A detailed analysis of failed devices has demonstrated that HFPN failures arise from changes of electronic circuit topology in pixel addressing decoders or the metal lines required for pixel powering and control. These changes are usually due to the presence of spot defects, causing some pixels in a row to operate incorrectly, leading to an HFPN failure. Moreover, defects resulting in partially degraded metal lines may not induce image failure in limited industrial test conditions, passing the optical tests. Later, these defects may produce an image failure in the field, either because the capture conditions would be more stringent, or because the defects would evolve into catastrophic faults due to electromigration. In this paper, we have first enhanced the HFPN detection algorithm in order to improve the fault coverage of the optical test. Next, a built-in self-test structure is presented for the on-chip detection of catastrophic and non-catastrophic defects in the pixel power and control lines.
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