集成光子学用钛酸钡硅薄膜的微观结构和铁电性

Kristy J. Kormondy, A. Demkov, Y. Popoff, M. Sousa, F. Eltes, D. Caimi, C. Marchiori, J. Fompeyrine, S. Abel
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引用次数: 0

摘要

在将新材料集成到硅光子结构中以扩展光子电路的功能方面取得了重大进展。其中一种很有前途的光学材料BaTiO3 (BTO)显示出高速光调制器所需的大波克尔斯系数。本文采用分子束外延和化学气相沉积等沉积方法,制备了具有不同形貌和晶体结构的BTO薄膜。通过确定BTO/Si中电光响应的关键结构预测因子,我们为在新型氧化物/半导体混合纳米光子器件中充分利用线性电光效应提供了路线图。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microstructure and ferroelectricity of barium titanate thin films on Si for integrated photonics
Significant progress has been made in integrating novel materials into silicon photonic structures to extend the functionality of photonic circuits. One of these promising optical materials, BaTiO3 (BTO), exhibits a large Pockels coefficient as required for high-speed light modulators. Here, we employ several deposition methods such as molecular beam epitaxy and chemical vapor deposition to realize BTO thin films with different morphology and crystalline structure. By identifying the key structural predictors of electro-optic response in BTO/Si, we provide a roadmap to fully exploit the linear electro-optic effect in novel hybrid oxide/semiconductor nanophotonic devices.
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