热氧化硅片的接触式和非接触式后cmp清洗

10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295) Pub Date : 1999-09-08 DOI:10.1109/ASMC.1999.798236

N. Moumen, M. Guarrera, C. Piboontum, A. Busnaina

{"title":"热氧化硅片的接触式和非接触式后cmp清洗","authors":"N. Moumen, M. Guarrera, C. Piboontum, A. Busnaina","doi":"10.1109/ASMC.1999.798236","DOIUrl":null,"url":null,"abstract":"Post-CMP cleaning of polished thermal oxide wafers is conducted using megasonic and brush cleaning techniques. The wafers were polished using Rodel silica based slurry. The results achieved by the two different cleaning methods are presented and compared. They show that although the two techniques produce comparable cleaning performance, non-contact cleaning using SCl produces lower defect counts on the cleaned wafers.","PeriodicalId":424267,"journal":{"name":"10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Contact and non contact post-CMP cleaning of thermal oxide silicon wafers\",\"authors\":\"N. Moumen, M. Guarrera, C. Piboontum, A. Busnaina\",\"doi\":\"10.1109/ASMC.1999.798236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Post-CMP cleaning of polished thermal oxide wafers is conducted using megasonic and brush cleaning techniques. The wafers were polished using Rodel silica based slurry. The results achieved by the two different cleaning methods are presented and compared. They show that although the two techniques produce comparable cleaning performance, non-contact cleaning using SCl produces lower defect counts on the cleaned wafers.\",\"PeriodicalId\":424267,\"journal\":{\"name\":\"10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-09-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.1999.798236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1999.798236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

抛光热氧化物晶圆的cmp后清洗使用超声和刷清洗技术进行。硅片采用罗德尔硅基浆料抛光。介绍并比较了两种不同清洗方法的清洗效果。他们表明，尽管两种技术产生相当的清洁性能，但使用SCl的非接触式清洁在清洁的晶圆上产生较低的缺陷数。

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Contact and non contact post-CMP cleaning of thermal oxide silicon wafers

Post-CMP cleaning of polished thermal oxide wafers is conducted using megasonic and brush cleaning techniques. The wafers were polished using Rodel silica based slurry. The results achieved by the two different cleaning methods are presented and compared. They show that although the two techniques produce comparable cleaning performance, non-contact cleaning using SCl produces lower defect counts on the cleaned wafers.

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10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295)

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