用于量子技术的超导TiN通硅孔

2019 IEEE 21st Electronics Packaging Technology Conference (EPTC) Pub Date : 2019-12-01 DOI:10.1109/EPTC47984.2019.9026646

K. Grigoras, S. Simbierowicz, L. Grönberg, J. Govenius, V. Vesterinen, M. Prunnila, J. Hassel

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引用次数: 3

摘要

在微波电路中，硅通孔(tsv)可用于信号路由和获得有效接地。超导材料的涂层是一个挑战，因为其结构的高纵横比。在本文中，我们成功地制备了一种直径为$60\ \mu \数学{m}$的超导氮化钛原子层沉积(ALD)涂层tsv。临界温度Tc约为1.6 K。

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Superconducting TiN through-silicon-vias for quantum technology

Through-silicon vias (TSVs) can be used to route signals and to obtain effective grounding in microwave circuits. The coating of the TSVs with a superconducting material is a challenge because of the high aspect ratio of the structures. In this paper, we present successful fabrication of superconducting $60\ \mu \mathrm{m}$ diameter TSVs, coated by atomic layer deposition (ALD) of titanium nitride. The critical temperature Tc is approximately 1.6 K.

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2019 IEEE 21st Electronics Packaging Technology Conference (EPTC)

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