高速硅双极集成电路中衬底效应的建模

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493893

M. Pfost, H. Rein, T. Holzwarth

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引用次数: 12

摘要

从理论上和实验上研究了p/sup /衬底和沟道阻挡器对硅双极晶体管和键合垫等效电路的贡献。推导了等效衬底电路，并利用新的计算机程序进行了数值模拟验证。通过高达20 GHz的片上测量，验证了数值模拟结果和等效电路的有效性。

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Modeling of the substrate effect in high-speed Si-bipolar ICs

The contribution of the p/sup -/ substrate and channel stopper on the equivalent circuits of Si-bipolar transistors and bond pads are theoretically and experimentally investigated up to very high frequencies. Equivalent substrate circuits are derived and verified by numerical simulation using a new computer program. The validity of both the numerical simulation results and the equivalent circuits are checked by on-wafer measurements up to 20 GHz.

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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