齐纳二极管击穿电压失配的表征与建模

Man Yang, C. McAndrew, Lei Chao, K. Xia
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引用次数: 1

摘要

本文介绍了齐纳二极管击穿电压失配的测试结构和方法。击穿的直接力电流/测量电压不足以准确地进行失配表征,因此我们使用$I(V)$扫描,然后进行三次插值;使用Tuinhout dut - 1-2-3 -2方法验证了该方法的准确性。为了证明我们的方法,我们在90nm功率BCD工艺中对5 V齐纳二极管的击穿电压失配进行了测量和建模。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization and Modeling of Zener Diode Breakdown Voltage Mismatch
In this paper, we present test structures and procedures to characterize and model mismatch of the breakdown voltage of Zener diodes. Direct force-current/measure-voltage for breakdown is not sufficiently accurate for mismatch characterization, so we use an $I(V)$ sweep followed by cubic interpolation; the accuracy of this approach is verified using the Tuinhout DUT-1-2-1-2 methodology. To demonstrate our approach, we present measured and modeled breakdown voltage mismatch for 5 V Zener diodes in a 90 nm power BCD process.
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