IGBT的二维有限元电热建模:单胞和多胞方法

2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems Pub Date : 2012-04-16 DOI:10.1109/ESIME.2012.6191757

K. El boubkari, S. Azzopardi, L. Théolier, J. Delétage, E. Woirgard

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引用次数: 7

摘要

本文对文献中的绝缘栅双极晶体管(IGBT)模型进行了回顾、分析和分类。我们比较了单细胞模型和多细胞模型在硅功率晶体管上应用的有限元电热模拟之间的硬切换，并展示了多细胞模型应用于平面栅极非冲孔通过IGBT (PG-NPT-IGBT)的优势。似乎一个或多个细胞的降解表现出细胞间电现象，这可能导致组件失效。

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2D finite elements electro-thermal modeling for IGBT: Uni and multicellular approach

In this paper, insulated gate bipolar transistor (IGBT) models in the literature are reviewed, analyzed, and classified in different categories. We compare unicellular and multicellular modeling for the hard-switching between finite elements electro-thermal simulations applied on a silicon power transistor and we show the advantages of multicellular modeling applying on a planar gate non punch through IGBT (PG-NPT-IGBT). It appears that degradation of one or more cells shows intercellular electrical phenomena which can lead to failure of components.

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来源期刊

2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems

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