利用超高阶扫描非线性介电显微镜建立局部深能级瞬态光谱，并对SiO2/SiC界面中的阱分布进行二维成像

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI:10.1109/IPFA.2016.7564317

N. Chinone, R. Kosugi, Yasunori Tanaka, S. Harada, H. Okumura, Yasuo Cho

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引用次数: 1

摘要

提出了一种微观评价绝缘体-半导体界面陷阱的新技术。将该技术应用于SiO2/SiC叠层结构，并对界面陷阱进行了二维成像。

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Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO2/SiC interface

A new technique for microscopically evaluating insulator-semiconductor interface traps is proposed. The proposed technique is applied for SiO2/SiC stack structure and 2-dimensional imaging of interface traps is performed.

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来源期刊

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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