{"title":"大功率母线在开关条件下的瞬变电磁特性建模与仿真","authors":"P. Bohm, G. Wachutka","doi":"10.1109/ISPSD.2000.856831","DOIUrl":null,"url":null,"abstract":"This article presents a new approach to the evaluation of the eigendynamics of interconnects encountered in high frequency power converters and high power semiconductor modules. It is based on a three-dimensional transient electromagnetic field analysis under realistic switching conditions which allows to investigate the various distributed parasitic effects caused by short switching times, steep current and voltage gradients and therefore large di/dt. The finite element simulator NM SESES/sup TM/ has been extended by an electromagnetic kernel to solve these problems. The capability of the simulator is demonstrated by some illustrative examples.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modelling and simulation of the transient electromagnetic behavior of high power bus bars under switching conditions\",\"authors\":\"P. Bohm, G. Wachutka\",\"doi\":\"10.1109/ISPSD.2000.856831\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This article presents a new approach to the evaluation of the eigendynamics of interconnects encountered in high frequency power converters and high power semiconductor modules. It is based on a three-dimensional transient electromagnetic field analysis under realistic switching conditions which allows to investigate the various distributed parasitic effects caused by short switching times, steep current and voltage gradients and therefore large di/dt. The finite element simulator NM SESES/sup TM/ has been extended by an electromagnetic kernel to solve these problems. The capability of the simulator is demonstrated by some illustrative examples.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856831\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856831","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modelling and simulation of the transient electromagnetic behavior of high power bus bars under switching conditions
This article presents a new approach to the evaluation of the eigendynamics of interconnects encountered in high frequency power converters and high power semiconductor modules. It is based on a three-dimensional transient electromagnetic field analysis under realistic switching conditions which allows to investigate the various distributed parasitic effects caused by short switching times, steep current and voltage gradients and therefore large di/dt. The finite element simulator NM SESES/sup TM/ has been extended by an electromagnetic kernel to solve these problems. The capability of the simulator is demonstrated by some illustrative examples.