高动态范围CMOS-MEMS电容式加速度计阵列

Metin G. Guney, Xiaoliang Li, V. P. Chung, J. Paramesh, T. Mukherjee, G. Fedder
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引用次数: 12

摘要

本文报道了一种高g CMOS-MEMS电容式加速度计阵列的设计和特性,该阵列的偏置稳定性为92 mG,设计输入范围为±50 kG,动态范围为91 dB。读出电路和MEMS传感器的片上集成最大限度地减少了传感节点的寄生电容,从而提高了灵敏度和动态范围。单个加速度计单元的小尺寸和质量确保了高g存活率。对来自加速计单元的信号在整个阵列上进行平均可以提高信噪比,从而提高动态范围。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High dynamic range CMOS-MEMS capacitive accelerometer array
This paper reports on the design and characterization of a high-g CMOS-MEMS capacitive accelerometer array with 92 mG bias stability and ± 50 kG designed input range with a validated 91 dB dynamic range. The on-chip integration of the read-out circuitry and the MEMS transducer minimizes sense-node parasitic capacitance, hence improving sensitivity and dynamic range. The small size and mass of individual accelerometer cells ensure high-g survivability. Averaging the signals from the accelerometer cells across the array improves the signal to noise ratio, hence improving the dynamic range.
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