湿气引起的金和铜球键的腐蚀

C. Breach, Tee Wai Mun, T. Lee, R. Holliday
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引用次数: 10

摘要

高金价重新燃起了人们用铜代替现有包装和新包装的兴趣,以节省成本。虽然可靠性经常被认为是使用铜的一个原因,但使用它的主要动力无疑是成本。认为铜线更可靠的看法是基于金属间化合物生长更慢,更细的金属间化合物更可靠的观念,然而旧的数据倾向于支持铜和金一样可靠的观点。然而,最近发现,在温度循环(TMCL)和压力锅测试(PCT)中,铝金属化上的铜球键比金键更容易失效[1-3]。这些测试的主要特点是存在的水分似乎会加速腐蚀。针对这一问题提出的一种解决方案是pd涂层铜线,这看起来是一种很有前途但目前相对未经测试的解决方案[1-4]。虽然pd涂层铜线可以提高可靠性,但与裸铜线相比,节省的成本将更少。然而,值得注意的是,最近的一项SEMI调查显示,行业对铜的信心普遍不如电线设备和材料供应商[5]。在微电子封装中,铝键垫的局部腐蚀是众所周知的,在Al-Cu和Al-Cu- si键垫中,CuAl2作为阴极,铝在水(电解质)的存在下腐蚀[6]。除了水分之外,氯和其他离子污染物的存在使情况变得复杂。在铜球键中,很难看到键合球中的金属间覆盖,但似乎CuAl2和Cu9Al4是最初形成的化合物[7]。与Au-Al化合物相比,Cu-Al化合物的金属间生长缓慢,这意味着在成品封装中,大量的Al仍然存在,而在金球键中,使用薄的1 μ m键垫,铝在封装,成型和表面安装后很容易消耗。在长时间暴露于潮湿、应力和离子污染物中,铜球键可能比金球键更容易受到局部腐蚀,这是合理的,因为缓慢的金属间生长允许铝腐蚀。本文讨论了球键腐蚀问题,并提出对于高可靠性应用或在潮湿环境中的应用,可能有必要加速Cu-Al金属间化合物的生长,以减轻潜在的腐蚀和失效。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Moisture induced corrosion in gold and copper ball bonds
High gold prices have led to renewed interest in replacing gold with copper in existing packages and new packages in order to save costs. Although reliability is often cited as a reason for using copper, the main driving force for its use is undoubtedly cost. Perceptions that copper wire is more reliable are based on the notion that the intermetallics grow more slowly and that thinner intermetallics are more reliable and yet old data tend to support the idea that copper is as reliable as gold. More recently however, copper ball bonds on aluminium metallization have been found to fail more than gold during temperature cycling (TMCL) and pressure cooker testing (PCT) [1–3]. The key feature of these tests is the presence of moisture than appears to accelerate corrosion. A proposed solution to this problem is Pd-coated Cu wire, which looks to be a promising but relatively untested solution at present [1–4]. While Pd-coated copper wire may improve reliability, cost-savings will be less compared with bare copper wire. It is important to note however that a recent SEMI survey shows that industry is generally not as confident in copper as wire equipment and materials suppliers [5]. Localized corrosion of aluminium bond pads is well known in microelectronics packaging and in Al-Cu and Al-Cu-Si bond pads, CuAl2 acts as a cathode and aluminium corrodes in the presence of water (electrolyte) [6]. The situation is complicated by the presence of chlorine and other ionic contaminants in addition to moisture. In copper ball bonds, intermetallic coverage in as-bonded balls is very difficult to see but it appears that CuAl2 and Cu9Al4 are the compounds that form initially [7]. Intermetallic growth of Cu-Al compounds is slow compared to Au-Al compounds, which means that in finished packages, a large amount of Al remains whereas in gold ball bonds, with thin 1µm bond pads, aluminium can easily be consumed after encapsulation and moulding and surface mounting. It is plausible that during extended periods of exposure to moisture, stress and ionic contaminants, Cu ball bonds may be more susceptible to localized corrosion than Au ball bonds because slow intermetallic growth permits aluminium corrosion. This paper discusses ball bond corrosion and suggests that for high reliability applications or applications in moist environments, it may be necessary to accelerate the growth of Cu-Al intermetallics to mitigate potential corrosion and failure.
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