用于x射线光谱成像装置的硅热敏电阻阵列上钽吸收体的集体杂化

F. De Moro, A. Aliane, A. Gasse, P. Agnèse, H. Ribot, C. Pigot, J. Sauvageot, V. Szeflinski
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引用次数: 1

摘要

我们正在为天文学研究开发一种低温x射线光谱成像照相机。这一开发成功的关键技术是在硅热敏电阻阵列上的钽吸收元件的倒装芯片集体杂交,纯铟焊料作为热和机械链接。本文首先介绍了探测器的结构。然后,详细介绍了钽元素集体杂化的4个主要挑战步骤。重点讨论了一种适合于In杂化的新型Ti/Au UBM的性质。最后,提出了第一个机械模型,展示了在5微米薄脆硅膜上具有500微米间距的8*8钽像素阵列的集体杂交。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Collective hybridization of tantalum absorbers on a silicon thermistors array for X-ray spectro imaging devices
We are developing a low temperature X-ray spectro-imaging camera for astronomy concerns. A key technology for the success of this development is the flip chip collective hybridization of tantalum absorbers elements on a silicon thermistors array with pure indium solder as the thermal and mechanical link. This paper first describes the structure of the detector. Then, the 4 mains challenging steps of the collective hybridization of tantalum elements are detailed. In particular is discussed the properties of a new Ti/Au UBM suitable for In hybridization. Finally, first mechanical mock-ups are presented, showing collective hybridization of 8*8 tantalum pixels array with a 500 mum pitch on 5 mum thin brittle silicon membranes.
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