先进CMOS技术中带有ESD保护器件的I/O失效分析

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378100

M. Muhammad, R. Gauthier, K. Chatty, Junjun Li, C. Seguin

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引用次数: 5

摘要

许多类型的ESD保护器件，如二极管、非场效应管、可控硅和具有不同失效机制的rc触发电源钳被用于先进的CMOS技术。电路原理图分析和SEM失效分析可以在ESD事件中清晰地预测和识别失效的I/O驱动/接收设备和/或各种ESD保护设备。

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Failure Analysis of I/O with ESD Protection Devices in Advanced CMOS Technologies

Many types of ESD protection devices such as diodes, NFETs, SCRs and RC-triggered power clamps having different failure mechanisms are used in advanced CMOS technologies. Circuit schematic analysis and SEM failure analysis are utilized to clearly predict and identify the failing I/O driver/receiver devices and/or the various ESD protection devices during an ESD event.

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2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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