2.4 GHz高增益低功耗窄带低噪声放大器(LNA)，采用0.18 /spl mu/m TSMC CMOS

2004 IEEE Workshop on Microelectronics and Electron Devices Pub Date : 2004-09-27 DOI:10.1109/WMED.2004.1297350

E. Kunz, S. Parke

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引用次数: 3

摘要

采用标准CMOS 0.18 TSMC工艺设计了一个2.4 GHz低噪声放大器。在2.4 GHz时，测量到的噪声系数和增益分别为1.65dB和51dB。LNA从1.8 V电源电压中吸取1.75 mA。本文详细介绍了该系统的设计过程和仿真过程。

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2.4 GHz high gain low power narrowband low-noise amplifier (LNA) in 0.18 /spl mu/m TSMC CMOS

A 2.4 GHz low-noise amplifier has been designed in a standard CMOS 0.18 TSMC process. The measured noise factor and gain are 1.65dB and 51dB, respectively, at 2.4 GHz. The LNA draws 1.75 mA from a 1.8 V supply voltage. The detailed design process and simulations are detailed in this paper.

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2004 IEEE Workshop on Microelectronics and Electron Devices

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