低频硅逆变器的电热特性研究

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE) Pub Date : 2010-04-26 DOI:10.1109/ESIME.2010.5464511

J. Antonios, N. Ginot, C. Batard, Y. Scudeller, M. Machmoum

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引用次数: 5

摘要

本文介绍了确定硅基igbt逆变器的功率损耗曲线和感应结温的方法。将功率损耗分解成不同的波形，研究其对IGBT结温的影响。利用传输矩阵技术建立了一个动态热模型来确定结温。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electro-thermal investigations on silicon inverters operating at low frequency

This paper presents methods for determining power loss profiles of Si-IGBT-based inverters and the induced junction temperature. Power losses were decomposed into different waveforms in order to investigate their influence on the junction temperature of the IGBT. Junction temperature has been determined by a dynamic thermal model using the transmission matrix technique.

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来源期刊

2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE)

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