28nm HKMG ESF3快闪记忆体TCAD建模与优化

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI:10.23919/SISPAD49475.2020.9241647

A. Zaka, T. Herrmann, R. Richter, S. Duenkel, Ruchil Jain

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摘要

本文提出了一种28nm HKMG ESF3 Flash Cell的TCAD建模方法。该方法包括直流和瞬态模拟，重点是热载流子注入建模。随后的浮门间隔优化呈现了各种优点之间的权衡，并强调了在Flash单元优化期间需要全面的DC/瞬态仿真方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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TCAD Modeling and Optimization of 28nm HKMG ESF3 Flash Memory

The paper presents a TCAD modeling approach of the 28nm HKMG ESF3 Flash Cell. The methodology encompasses both DC and transient simulations with focus on hot carrier injection modeling. The ensuing Floating Gate Spacer optimization presents the trade-off between the various figures of merit and highlights the need for a comprehensive DC/transient simulation approach during Flash cell optimization.

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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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