多晶硅发射极bjt作为相变存储器接入器件的特性研究

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159278

B. Rajendran, M. Breitwisch, R. Cheek, M. Lee, Y. Shih, H. Lung, C. Lam

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引用次数: 6

摘要

我们展示了可以用作相变存储器访问器件的多晶硅发射极垂直PNP双极结晶体管(BJTs)。采用180nm BiCMOS工艺制造的器件阵列具有超过10mA/µm2的电流驱动能力、大于6个数量级的通断比和出色的串扰抗扰性。我们的工艺集成方案可以扩展到实现高密度相变存储器技术。

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Characterization of poly-Silicon emitter BJTs as access devices for Phase Change Memory

We demonstrate poly-Silicon emitter vertical PNP Bipolar Junction Transistors (BJTs) that could be used as access devices for Phase Change Memory. The device arrays fabricated using a 180nm BiCMOS process exhibit current drive capability in excess of 10mA/µm2, On-Off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density Phase Change Memory technology.

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2009 International Symposium on VLSI Technology, Systems, and Applications

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