{"title":"用于集成传感器应用的多晶硅新技术","authors":"Mingxiang Wang, Z. Meng, Y. Zohar, M. Wong","doi":"10.1109/MEMSYS.2000.838500","DOIUrl":null,"url":null,"abstract":"A novel metal-induced lateral crystallization (MILC) technique has been applied to the formation of polycrystalline silicon (poly-Si) with greatly enhanced material characteristics. Compared to conventional poly-Si, MILC poly-Si gives rise to much improved performance not only in sensors but also in thin film transistors. A variety of sensing and electronic devices can be realized simultaneously on MILC poly-Si, thus making MILC an enabling technology for integrated silicon micro-machining.","PeriodicalId":251857,"journal":{"name":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A new polycrystalline silicon technology for integrated sensor applications\",\"authors\":\"Mingxiang Wang, Z. Meng, Y. Zohar, M. Wong\",\"doi\":\"10.1109/MEMSYS.2000.838500\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel metal-induced lateral crystallization (MILC) technique has been applied to the formation of polycrystalline silicon (poly-Si) with greatly enhanced material characteristics. Compared to conventional poly-Si, MILC poly-Si gives rise to much improved performance not only in sensors but also in thin film transistors. A variety of sensing and electronic devices can be realized simultaneously on MILC poly-Si, thus making MILC an enabling technology for integrated silicon micro-machining.\",\"PeriodicalId\":251857,\"journal\":{\"name\":\"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-01-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2000.838500\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Thirteenth Annual International Conference on Micro Electro Mechanical Systems (Cat. No.00CH36308)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2000.838500","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new polycrystalline silicon technology for integrated sensor applications
A novel metal-induced lateral crystallization (MILC) technique has been applied to the formation of polycrystalline silicon (poly-Si) with greatly enhanced material characteristics. Compared to conventional poly-Si, MILC poly-Si gives rise to much improved performance not only in sensors but also in thin film transistors. A variety of sensing and electronic devices can be realized simultaneously on MILC poly-Si, thus making MILC an enabling technology for integrated silicon micro-machining.