J. Browning, C. Chan, J. Ye, R. Macgregor, T. Ruden
{"title":"交叉场放大器端帽效应的测量","authors":"J. Browning, C. Chan, J. Ye, R. Macgregor, T. Ruden","doi":"10.1109/IEDM.1992.307468","DOIUrl":null,"url":null,"abstract":"A linear format, low frequency (150 MHz), low power (10 to 100 W), crossed-field amplifier is operated with variable bias, electrostatic confining electrodes (end-hats). The end-hat bias is found to cause electron transport only in the vicinity of the end-hats. End-hat current measurements indicate a substantial part of the electron beam current (40%) can be collected when the end-hats are biased more positive than the floating potential. The observed change in gain versus end-hat bias can be accounted for by the lost beam current. Device gain versus sole bias measurements have been compared with numerical simulations and give general agreement.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Measurement of end-hat effects in a crossed-field amplifier\",\"authors\":\"J. Browning, C. Chan, J. Ye, R. Macgregor, T. Ruden\",\"doi\":\"10.1109/IEDM.1992.307468\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A linear format, low frequency (150 MHz), low power (10 to 100 W), crossed-field amplifier is operated with variable bias, electrostatic confining electrodes (end-hats). The end-hat bias is found to cause electron transport only in the vicinity of the end-hats. End-hat current measurements indicate a substantial part of the electron beam current (40%) can be collected when the end-hats are biased more positive than the floating potential. The observed change in gain versus end-hat bias can be accounted for by the lost beam current. Device gain versus sole bias measurements have been compared with numerical simulations and give general agreement.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307468\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Measurement of end-hat effects in a crossed-field amplifier
A linear format, low frequency (150 MHz), low power (10 to 100 W), crossed-field amplifier is operated with variable bias, electrostatic confining electrodes (end-hats). The end-hat bias is found to cause electron transport only in the vicinity of the end-hats. End-hat current measurements indicate a substantial part of the electron beam current (40%) can be collected when the end-hats are biased more positive than the floating potential. The observed change in gain versus end-hat bias can be accounted for by the lost beam current. Device gain versus sole bias measurements have been compared with numerical simulations and give general agreement.<>