优化水杨酸盐厚度，提高130 nm PD SOI性能

2003 IEEE International Conference on SOI Pub Date : 2003-11-03 DOI:10.1109/SOI.2003.1242903

S. Haendler, R. Gwoziecki, C. Tabone, H. Brut, C. Raynaud

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引用次数: 1

摘要

分析了增加水化钴厚度对130 nm节点PD-SOI MOS电路性能的影响。通过调整钴的沉积厚度，可以实现低栅极电阻和较好的I/sub OFF/ NMOS控制。使用器件和“电路”结果表明，静态电流消耗减少了10倍而不影响动态性能，而栅极电阻减少了2-3倍，SRAM的静态噪声裕度提高了10%。

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Optimizing the salicide thickness for improving 130 nm PD SOI performances

The impact of an increased cobalt salicide thickness on MOS circuit performances for 130 nm node PD-SOI is analyzed. By adjusting the cobalt deposition thickness, low gate resistance, as well as better control of I/sub OFF/ for NMOS are achieved. Using devices and "circuits" results, it is shown that static current consumption is decreased by a factor 10 without compromising the dynamic performances, whereas the gate resistance is reduced by a factor 2-3 and the static noise margin for SRAM is improved by 10%.

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2003 IEEE International Conference on SOI

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