用磁电阻表征全耗尽GeOI pMOSFET的新方法

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641398

W. Van Den Daele, C. Le Royer, E. Augendre, G. Ghibaudo, S. Cristoloveanu

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引用次数: 0

摘要

利用几何磁阻技术首次测定和分析了完全耗尽的GeOI pmosfet中的空穴迁移率。温度相关的测量阐明了散射机制。有效迁移率与磁阻迁移率之间存在显著差异。与SOI nMOSFET不同，该比值(rMR≃1.8)与温度和反转电荷无关，具有特殊的散射机制。

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Novel characterization of fully-depleted GeOI pMOSFET by magnetoresistance

Hole mobility in fully-depleted GeOI pMOSFETs is determined and analyzed using for the first time the geometric magnetoresistance technique. The temperature dependent measurements clarify the scattering mechanisms. A significant difference between effective mobility and magnetoresistance mobility is found. Unlike the SOI nMOSFET, this ratio (rMR ≃ 1.8) is rather independent on the temperature and inversion charge pointing out special scattering mechnisms.

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2010 IEEE International SOI Conference (SOI)

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