{"title":"用有限元模拟和响应面法确定BEOL铝铜本构方程","authors":"R. Sethu, Hansika Jayawardana, K. Soon, A. Chai","doi":"10.1109/EUROSIME.2019.8724582","DOIUrl":null,"url":null,"abstract":"The constitutive equation model for a particular aluminum thin film deposited using Physical Vapor Deposition (PVD) process used in wafer fabrication Back End of Line (BEOL) has been determined by matching the data from experimental nanoindentation and Finite Element Analysis (FEA) simulation. The model used is a derivative of the Voce isotropic hardening model which is defined by three coefficients. The Linear Hardening Coefficient, Saturation Flow Stress and Saturation Exponent has been determined to be 21937 MPa, 135 MPa and 25 respectively.","PeriodicalId":357224,"journal":{"name":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Determination of BEOL Aluminum-Copper Constitutive Equation using FEA Simulation and Response Surface Methodology\",\"authors\":\"R. Sethu, Hansika Jayawardana, K. Soon, A. Chai\",\"doi\":\"10.1109/EUROSIME.2019.8724582\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The constitutive equation model for a particular aluminum thin film deposited using Physical Vapor Deposition (PVD) process used in wafer fabrication Back End of Line (BEOL) has been determined by matching the data from experimental nanoindentation and Finite Element Analysis (FEA) simulation. The model used is a derivative of the Voce isotropic hardening model which is defined by three coefficients. The Linear Hardening Coefficient, Saturation Flow Stress and Saturation Exponent has been determined to be 21937 MPa, 135 MPa and 25 respectively.\",\"PeriodicalId\":357224,\"journal\":{\"name\":\"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUROSIME.2019.8724582\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROSIME.2019.8724582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Determination of BEOL Aluminum-Copper Constitutive Equation using FEA Simulation and Response Surface Methodology
The constitutive equation model for a particular aluminum thin film deposited using Physical Vapor Deposition (PVD) process used in wafer fabrication Back End of Line (BEOL) has been determined by matching the data from experimental nanoindentation and Finite Element Analysis (FEA) simulation. The model used is a derivative of the Voce isotropic hardening model which is defined by three coefficients. The Linear Hardening Coefficient, Saturation Flow Stress and Saturation Exponent has been determined to be 21937 MPa, 135 MPa and 25 respectively.