存储器技术的发展趋势——可靠性的前景、挑战和机遇

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378072

C. Mouli, K. Prall, C. Roberts

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引用次数: 4

摘要

随着DRAM和NAND单元快速扩展到纳米级，满足设计和可靠性要求需要对单单元特性有更深入的了解。这些技术之间的一些挑战是共同的，而另一些则是独特的。新的材料和电池结构正在被引入来解决这些问题，并提供进一步扩展的机会。

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Trends in memory technology - reliability perspectives, challenges and opportunities

As DRAM and NAND cells are rapidly scaled deep into the nanoscale regime, meeting design and reliability requirements require deeper understanding of single-cell characteristics. Some of the challenges are common between these technologies while some are unique. New materials and cell structures are being introduced to address some of these issues and provide further scaling opportunities.

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2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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