晶圆级Cu/Sn-BCB杂化键合Cu tsv的电学特性及可靠性研究

Yao-Jen Chang, Cheng-Ta Ko, Z. Hsiao, Ting-Yang Yu, Y. -. Chen, W. Lo, Kuan-Neng Chen
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引用次数: 3

摘要

提出了一种基于Cu/Sn微凸点和BCB杂化键合的Cu tsv晶圆级三维集成结构。电气特性和可靠性评估采用开尔文结构和菊花链设计。结果表明,所设计的三维集成方案具有良好的可靠性和电气稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical characterization and reliability investigations of Cu TSVs with wafer-level Cu/Sn-BCB hybrid bonding
A wafer-level 3D integration structure with Cu TSVs based on Cu/Sn micro-bumps and BCB hybrid bonding is demonstrated. Kelvin structure and daisy chain design are adopted for electrical characterization and reliability evaluation. The results indicate the developed 3D integration scheme has excellent reliability and electrical stability.
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