Yao-Jen Chang, Cheng-Ta Ko, Z. Hsiao, Ting-Yang Yu, Y. -. Chen, W. Lo, Kuan-Neng Chen
{"title":"晶圆级Cu/Sn-BCB杂化键合Cu tsv的电学特性及可靠性研究","authors":"Yao-Jen Chang, Cheng-Ta Ko, Z. Hsiao, Ting-Yang Yu, Y. -. Chen, W. Lo, Kuan-Neng Chen","doi":"10.1109/VLSI-TSA.2012.6210175","DOIUrl":null,"url":null,"abstract":"A wafer-level 3D integration structure with Cu TSVs based on Cu/Sn micro-bumps and BCB hybrid bonding is demonstrated. Kelvin structure and daisy chain design are adopted for electrical characterization and reliability evaluation. The results indicate the developed 3D integration scheme has excellent reliability and electrical stability.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"127 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Electrical characterization and reliability investigations of Cu TSVs with wafer-level Cu/Sn-BCB hybrid bonding\",\"authors\":\"Yao-Jen Chang, Cheng-Ta Ko, Z. Hsiao, Ting-Yang Yu, Y. -. Chen, W. Lo, Kuan-Neng Chen\",\"doi\":\"10.1109/VLSI-TSA.2012.6210175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wafer-level 3D integration structure with Cu TSVs based on Cu/Sn micro-bumps and BCB hybrid bonding is demonstrated. Kelvin structure and daisy chain design are adopted for electrical characterization and reliability evaluation. The results indicate the developed 3D integration scheme has excellent reliability and electrical stability.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"127 4\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210175\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical characterization and reliability investigations of Cu TSVs with wafer-level Cu/Sn-BCB hybrid bonding
A wafer-level 3D integration structure with Cu TSVs based on Cu/Sn micro-bumps and BCB hybrid bonding is demonstrated. Kelvin structure and daisy chain design are adopted for electrical characterization and reliability evaluation. The results indicate the developed 3D integration scheme has excellent reliability and electrical stability.