119 BGA封装的结对顶和结对板热阻测量

T. Chung, M. Kim, J. Baek, S. Oh
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引用次数: 3

摘要

采用冷板-聚四氟乙烯块法研究了用于4mbit SP SRAM的119bga封装的结顶热阻(/spl theta//sub jt/)和结板热阻(/spl theta//sub jb/),并与结壳热阻(/spl theta//sub jc/)测量方法进行了比较。制备了热片和实片来测量119bga封装的热阻。实模的结壳热阻和结顶热阻分别约为3.5/spl度/C/W和3.8/spl度/C/W,而热模的结壳热阻和结顶热阻分别为4.0/spl度/C/W和4.8/spl度/C/W。无论是热模还是实模,结对外壳的热阻都小于结对顶部的热阻。这是由于每种测试方法对119 BGA封装应用不同的热边界条件。同时,采用热片封装的热阻比采用真片封装的热阻高约14.3/spl sim/26.3%,其原因正在研究中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Junction-to-top and junction-to-board thermal resistance measurement for 119 BGA packages
Junction-to-top (/spl theta//sub jt/) and junction-to-board (/spl theta//sub jb/) thermal resistance of a 119 BGA package for 4 Mbit SP SRAM have been investigated using the cold plate-Teflon block method and was compared with the junction-to-case thermal resistance (/spl theta//sub jc/) measurement method. Both thermal dice and real dice were prepared to measure the 119 BGA package thermal resistance. The junction-to-case and junction-to-top thermal resistance for a real die are about 3.5/spl deg/C/W and 3.8/spl deg/C/W respectively, whereas with a thermal die, the junction-to-case and junction-to-top thermal resistance are 4.0/spl deg/C/W and 4.8/spl deg/C/W respectively. For both thermal and real die, the junction-to-case thermal resistance is less than the junction-to-top thermal resistance. This is attributed to the different thermal boundary conditions applied to the 119 BGA package for each test method. In the meantime, thermal resistances of packages with thermal dice were approximately 14.3/spl sim/26.3% higher than those of package with real dice, the reason for which is being investigated.
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