基于tsv的三维芯片集成中带帽的片上电网系统建模

Z. Oo
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引用次数: 0

摘要

电源噪声的有效建模对于稳健的电源设计至关重要,特别是随着新兴的3D芯片集成技术的出现,片上电网的尺寸不断增加。由于电网是通过硅通孔(tsv)垂直互连的,因此集成电路(ic)中每个功能器件所需的工作电流通过垂直电源和接地tsv以及水平电网提供。器件的快速开关速度使最坏情况下电源噪声的准确分析变得复杂。本文采用一种新颖的等效开盖电路模型,对基于tsv的芯片集成技术中采用去耦电容的片上电网进行了系统建模。在基于tsv的三维芯片集成技术中,等效电路模型将被数值验证并集成到片上电网阻抗剖面的有效建模和电源噪声分析中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Systematic modeling of on-chip power grids with decaps in TSV-based 3D chip integration
Efficient modeling of power supply noises is crucial for a robust power supply design, especially with increase in the size of on-chip power grids due to emerging 3D chip integration technology. As the power grid is interconnected vertically by through-silicon vias (TSVs), operational currents required by each functional device in integrated circuits (ICs) are supplied through vertical power and ground TSVs, and horizontal power grids. Fast switching speed of the devices become complicated the accurate analysis of the worst case power supply noises. In this paper, a systematic modeling of on-chip power grids with decoupling capacitors - VNCAPs - used in TSV-based chip integration technology is presented using novel equivalent decap circuit model. The equivalent circuit model will be numerically validated and integrated into an efficient modeling for impedance profile of on-chip power grids and analysis of power supply noises in TSV-based 3D chip integration technology.
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