Hiroaki Ikeda, S. Sekine, Ryuji Kimura, Koichi Shimokawa, K. Okada, H. Shindo, T. Ooi, Rei Tamaki, Makoto Nagata
{"title":"细间距微凸块印刷成型","authors":"Hiroaki Ikeda, S. Sekine, Ryuji Kimura, Koichi Shimokawa, K. Okada, H. Shindo, T. Ooi, Rei Tamaki, Makoto Nagata","doi":"10.1109/ICEP.2016.7486824","DOIUrl":null,"url":null,"abstract":"We have examined printing technology which is adaptable to 3DIC bump-forming for (both front-side bump and back-side bump. The materials for bumping require several features for TSV process circumstances and 3DIC stacking followed by reflow. We chose Nano-Function material for the purpose which was initially developed for power semiconductor attachment. The result shows good possibility. 20μm bump pitch capability was confirmed.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"48 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fine pitch micro-bump forming by printing\",\"authors\":\"Hiroaki Ikeda, S. Sekine, Ryuji Kimura, Koichi Shimokawa, K. Okada, H. Shindo, T. Ooi, Rei Tamaki, Makoto Nagata\",\"doi\":\"10.1109/ICEP.2016.7486824\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have examined printing technology which is adaptable to 3DIC bump-forming for (both front-side bump and back-side bump. The materials for bumping require several features for TSV process circumstances and 3DIC stacking followed by reflow. We chose Nano-Function material for the purpose which was initially developed for power semiconductor attachment. The result shows good possibility. 20μm bump pitch capability was confirmed.\",\"PeriodicalId\":343912,\"journal\":{\"name\":\"2016 International Conference on Electronics Packaging (ICEP)\",\"volume\":\"48 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Electronics Packaging (ICEP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEP.2016.7486824\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEP.2016.7486824","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have examined printing technology which is adaptable to 3DIC bump-forming for (both front-side bump and back-side bump. The materials for bumping require several features for TSV process circumstances and 3DIC stacking followed by reflow. We chose Nano-Function material for the purpose which was initially developed for power semiconductor attachment. The result shows good possibility. 20μm bump pitch capability was confirmed.