细间距微凸块印刷成型

Hiroaki Ikeda, S. Sekine, Ryuji Kimura, Koichi Shimokawa, K. Okada, H. Shindo, T. Ooi, Rei Tamaki, Makoto Nagata
{"title":"细间距微凸块印刷成型","authors":"Hiroaki Ikeda, S. Sekine, Ryuji Kimura, Koichi Shimokawa, K. Okada, H. Shindo, T. Ooi, Rei Tamaki, Makoto Nagata","doi":"10.1109/ICEP.2016.7486824","DOIUrl":null,"url":null,"abstract":"We have examined printing technology which is adaptable to 3DIC bump-forming for (both front-side bump and back-side bump. The materials for bumping require several features for TSV process circumstances and 3DIC stacking followed by reflow. We chose Nano-Function material for the purpose which was initially developed for power semiconductor attachment. The result shows good possibility. 20μm bump pitch capability was confirmed.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"48 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fine pitch micro-bump forming by printing\",\"authors\":\"Hiroaki Ikeda, S. Sekine, Ryuji Kimura, Koichi Shimokawa, K. Okada, H. Shindo, T. Ooi, Rei Tamaki, Makoto Nagata\",\"doi\":\"10.1109/ICEP.2016.7486824\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have examined printing technology which is adaptable to 3DIC bump-forming for (both front-side bump and back-side bump. The materials for bumping require several features for TSV process circumstances and 3DIC stacking followed by reflow. We chose Nano-Function material for the purpose which was initially developed for power semiconductor attachment. The result shows good possibility. 20μm bump pitch capability was confirmed.\",\"PeriodicalId\":343912,\"journal\":{\"name\":\"2016 International Conference on Electronics Packaging (ICEP)\",\"volume\":\"48 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Electronics Packaging (ICEP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEP.2016.7486824\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEP.2016.7486824","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们研究了适用于3DIC凹凸成型的印刷技术,包括正面凹凸和背面凹凸。碰撞材料需要几个TSV工艺环境和3DIC堆叠的特点,然后是回流。我们选择了纳米功能材料,它最初是为功率半导体附件开发的。结果显示了良好的可能性。验证了20μm的凹凸间距能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fine pitch micro-bump forming by printing
We have examined printing technology which is adaptable to 3DIC bump-forming for (both front-side bump and back-side bump. The materials for bumping require several features for TSV process circumstances and 3DIC stacking followed by reflow. We chose Nano-Function material for the purpose which was initially developed for power semiconductor attachment. The result shows good possibility. 20μm bump pitch capability was confirmed.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信