{"title":"扩散模拟中有效的三维网格自适应","authors":"T. Chen, D. Yergeau, R. Dutton","doi":"10.1109/SISPAD.1996.865324","DOIUrl":null,"url":null,"abstract":"Summary form only given. Diffusion simulation is an important part in today's TCAD research. While many works have been done on 2D mesh adaptations in diffusion simulation, 3D mesh adaptation remains a challenging area due to the excessive amount of grid points most mesh generation algorithms produce. In this paper, we apply a generalized octree grid generation algorithm for mesh adaptation. It has the advantage of reducing the number of nodes necessary for accurate simulations. New nodes are added efficiently to reflect the changing position of the junctions and old nodes are removed when they no longer have simulation significance.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"44 10","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Efficient 3D mesh adaptation in diffusion simulation\",\"authors\":\"T. Chen, D. Yergeau, R. Dutton\",\"doi\":\"10.1109/SISPAD.1996.865324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Diffusion simulation is an important part in today's TCAD research. While many works have been done on 2D mesh adaptations in diffusion simulation, 3D mesh adaptation remains a challenging area due to the excessive amount of grid points most mesh generation algorithms produce. In this paper, we apply a generalized octree grid generation algorithm for mesh adaptation. It has the advantage of reducing the number of nodes necessary for accurate simulations. New nodes are added efficiently to reflect the changing position of the junctions and old nodes are removed when they no longer have simulation significance.\",\"PeriodicalId\":341161,\"journal\":{\"name\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"volume\":\"44 10\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.1996.865324\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Efficient 3D mesh adaptation in diffusion simulation
Summary form only given. Diffusion simulation is an important part in today's TCAD research. While many works have been done on 2D mesh adaptations in diffusion simulation, 3D mesh adaptation remains a challenging area due to the excessive amount of grid points most mesh generation algorithms produce. In this paper, we apply a generalized octree grid generation algorithm for mesh adaptation. It has the advantage of reducing the number of nodes necessary for accurate simulations. New nodes are added efficiently to reflect the changing position of the junctions and old nodes are removed when they no longer have simulation significance.