质量soc设计和实现真正的可制造性

S. Kohyama
{"title":"质量soc设计和实现真正的可制造性","authors":"S. Kohyama","doi":"10.1109/ISQED.2003.1194703","DOIUrl":null,"url":null,"abstract":"Device miniaturization near 100nm node and beyond together with extreme multi-level interconnect started to create fundamental economical and engineering challenges. Especially, past success model of “Layer Masters” confessed difficulties to fill the gaps between each separated layers to complete integrated results, for meeting performance and yield with a reasonable timing. However, it is also obvious that classic IDM model proved to be so inefficient, since inevitable separation and standardization of various aspects of design and technology are not established adequately. Those issues are even more significant when we discuss complex SoC’s for 90nm and 65nm nodes, where design and implementation commingle in various different manners. A solution for these challenges is a new open IDM model where open collaboration and strong differentiator are essential. This presentation will discuss from a “SoC centric Open IDM” perspective, the whole flow of design and implementation for real manufacturability, where true knowledge of integration and management skill function to enhance differentiators on top of open platforms.","PeriodicalId":448890,"journal":{"name":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","volume":"16 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quality soc design and implementation for real manufacturability\",\"authors\":\"S. Kohyama\",\"doi\":\"10.1109/ISQED.2003.1194703\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Device miniaturization near 100nm node and beyond together with extreme multi-level interconnect started to create fundamental economical and engineering challenges. Especially, past success model of “Layer Masters” confessed difficulties to fill the gaps between each separated layers to complete integrated results, for meeting performance and yield with a reasonable timing. However, it is also obvious that classic IDM model proved to be so inefficient, since inevitable separation and standardization of various aspects of design and technology are not established adequately. Those issues are even more significant when we discuss complex SoC’s for 90nm and 65nm nodes, where design and implementation commingle in various different manners. A solution for these challenges is a new open IDM model where open collaboration and strong differentiator are essential. This presentation will discuss from a “SoC centric Open IDM” perspective, the whole flow of design and implementation for real manufacturability, where true knowledge of integration and management skill function to enhance differentiators on top of open platforms.\",\"PeriodicalId\":448890,\"journal\":{\"name\":\"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.\",\"volume\":\"16 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2003.1194703\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fourth International Symposium on Quality Electronic Design, 2003. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2003.1194703","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

近100纳米及以上节点的器件小型化以及极端的多层次互连开始带来基本的经济和工程挑战。特别是以往的“层主”成功模式,难以在合理的时间内填补各个分离层之间的空白,以完成综合结果,以满足性能和良率。然而,同样明显的是,经典的IDM模型被证明是如此低效,因为设计和技术的各个方面的不可避免的分离和标准化没有充分建立。当我们讨论用于90纳米和65纳米节点的复杂SoC时,这些问题就更加重要了,因为这些节点的设计和实现以各种不同的方式混合在一起。应对这些挑战的解决方案是一个新的开放IDM模型,其中开放协作和强大的差异化是必不可少的。本演讲将从“以SoC为中心的开放IDM”的角度讨论真正可制造性的整个设计和实现流程,其中真正的集成知识和管理技能功能可以增强开放平台之上的差异化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quality soc design and implementation for real manufacturability
Device miniaturization near 100nm node and beyond together with extreme multi-level interconnect started to create fundamental economical and engineering challenges. Especially, past success model of “Layer Masters” confessed difficulties to fill the gaps between each separated layers to complete integrated results, for meeting performance and yield with a reasonable timing. However, it is also obvious that classic IDM model proved to be so inefficient, since inevitable separation and standardization of various aspects of design and technology are not established adequately. Those issues are even more significant when we discuss complex SoC’s for 90nm and 65nm nodes, where design and implementation commingle in various different manners. A solution for these challenges is a new open IDM model where open collaboration and strong differentiator are essential. This presentation will discuss from a “SoC centric Open IDM” perspective, the whole flow of design and implementation for real manufacturability, where true knowledge of integration and management skill function to enhance differentiators on top of open platforms.
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