基于OBIC的激光载流子注入技术用于CMOS LSI失效分析:光致态跃迁(LIST)方法

Y. Kohno, M. Shimizu, K. Kitamura, A. Nishikawa, C. Odani, N. Miura
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引用次数: 5

摘要

本文介绍了一种新技术,称为光诱导状态转换(LIST)方法,该方法使用光束感应电流(OBIC)系统进行CMOS lsi的失效分析。该技术允许在待机状态下定位短路到GND总线的低信号线(或短路到V/sub DD/总线的高信号线),这是传统故障分析技术(如光电分析、液晶技术或传统OBIC方法)无法实现的。通过对包含FIB沉积修补的准故障的逆变器链进行实验,验证了LIST方法的有效性。LIST方法也被用于实际的CMOS逻辑故障分析,并已被证明是有用的快速找到故障位置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Laser beam carrier injection technique for CMOS LSI failure analysis using an OBIC: light-induced state transition (LIST) method
This paper describes a new technique, called the Light-Induced State Transition (LIST) method that uses an optical beam induced current (OBIC) system for failure analysis of CMOS LSIs. This technique allows one to locate a low signal line short-circuited to a GND bus (or a high signal line short-circuited to a V/sub DD/ bus) in stand-by condition which is not possible with conventional failure analysis techniques such as photo-emission analysis, liquid crystal technique, or the conventional OBIC method. The effectiveness of the LIST method was verified by an experiment on inverter chains that included quasi-failures intentionally patched by FIB deposition. The LIST method has also been used for actual CMOS logic failure analysis, and has proved to be useful for finding a failure location rapidly.
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