一种实验测定FLOTOX EEPROM细胞中控制栅和漏极耦合比的新方法

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292904

C. Papadas, B. Moison, G. Ghibaudo, P. Mortini, G. Panankakis

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引用次数: 4

摘要

提出了一种提取FLOTOX电可擦PROM (EEPROM)电池中控制栅极和漏极耦合比的新方法。该方法可以直接在存储单元上进行参数提取，而无需使用所谓的虚拟单元。该方法的快速性允许在整个晶圆或矩阵中执行耦合比变化的统计分析。提出了一种替代的简化方法，用于提取FLOTOX EEPROM电池中的漏极耦合比，可选地使用虚拟电池。

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A new method for the experimental determination of the control gate and drain coupling ratios in FLOTOX EEPROM cells

A new method for the extraction of the control gate and drain coupling ratios in FLOTOX electrically erasable PROM (EEPROM) cells is proposed. The method enables parameter extraction to be performed directly on the memory cells, without any use of the so-called dummy-cell. The rapidity of the method allows statistical analysis of the coupling ratio variation to be performed throughout a wafer or a matrix. An alternative simplified method for extracting the drain coupling ratio in FLOTOX EEPROM cells, with optional use of the dummy-cell, is proposed.<>

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ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

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