支持多嵌套循环算法的现场可编程存储器BIST体系结构

Xiaogang Du, N. Mukherjee, Chris Hill, Wu-Tung Cheng, S. Reddy
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引用次数: 25

摘要

现场可编程存储器BIST控制器正成为解决嵌入式存储器制造缺陷的必需品。对于65nm及以下的工艺,随机缺陷并不是影响成品率的唯一因素。系统缺陷和参数缺陷现在是记忆失效的主要原因,必须加以解决。传统的内存BIST算法通常以捕获随机缺陷为目标。为了捕捉这些系统缺陷和参数缺陷,有必要在制造后灵活地将新算法应用于嵌入式存储器。本文提出了一种支持算法测试步骤中的多个循环(包括嵌套循环)的现场可编程存储器BIST体系结构。因此,这些控制器保证在故障分析期间支持复杂的算法,这些算法可以帮助提高产量或减少测试逃逸。此外,所提出的架构本质上是模块化的,可以优化控制器的复杂性以及面积和性能
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Field Programmable Memory BIST Architecture Supporting Algorithms with Multiple Nested Loops
Field programmable memory BIST controllers are becoming a necessity to target manufacturing defects in embedded memories. For 65nm and below, random defects are not the only ones affecting the yield of a process. Systematic as well as parametric defects are now the predominant causes of memory failures and have to be addressed. Conventional memory BIST algorithms are usually targeted to catch random defects. In order to catch such systematic and parametric defects, it is necessary to have the flexibility to apply new algorithms to embedded memories after manufacturing. In this paper, a field programmable memory BIST architecture is proposed to support multiple loops within a test step of an algorithm, including nested loops. These controllers, therefore, guarantee supporting complex algorithm necessary to target defects during failure analysis that could help yield ramp up or reduce test escapes. In addition, the proposed architecture is modular in nature and allows optimizing the complexity of the controller along with area and performance
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