对双晶体管单元阵列估计阈值电压变异性的重新考虑

2013 IEEE International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2013-03-25 DOI:10.1109/ICMTS.2013.6528155

K. Terada, N. Higuchi, K. Tsuji

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引用次数: 0

摘要

采用65纳米工艺制作的测试芯片，对PTA (Pair Transistor cell Array)估算的阈值电压σVTH的标准差进行了检验。结果表明，误差主要由两个问题引起:1)近似问题和2)隔离区漏电流问题。为此，对PTA在划线试验结构中的应用进行了研究。

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Reconsideration of the threshold voltage variability estimated with pair transistor cell array

The standard deviation of threshold voltage, σVTH, which is estimated with Pair Transistor cell Array (PTA), is examined using the test chip fabricated by 65-nm technology. It is found that the errors are caused by two problems: 1) the problem in the approximation and 2) leak current in the isolation region. Taking them into account, the application of PTA to the test structure in scribe line is studied.

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2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)

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