M. Toledano-Luque, B. Kaczer, E. Simoen, R. Degraeve, J. Franco, P. Roussel, T. Grasser, G. Groeseneken
{"title":"纳米nfet和pfet漏极和栅极电流中单捕集和去捕集效应的相关性","authors":"M. Toledano-Luque, B. Kaczer, E. Simoen, R. Degraeve, J. Franco, P. Roussel, T. Grasser, G. Groeseneken","doi":"10.1109/IRPS.2012.6241935","DOIUrl":null,"url":null,"abstract":"The correlation of discrete gate and drain current fluctuations is revealed in nanoscaled SiON pFETs and nFETs, demonstrating that discrete trapping and detrapping events in the same single states are responsible of both ID and IG random telegraph noise (RTN). The high and low gate current IG-RTN levels are independent of temperature but the switching rates thermally activated indicating that the trapping and detrapping events are consistent with nonradiative multiphonon theory.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"39","resultStr":"{\"title\":\"Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs\",\"authors\":\"M. Toledano-Luque, B. Kaczer, E. Simoen, R. Degraeve, J. Franco, P. Roussel, T. Grasser, G. Groeseneken\",\"doi\":\"10.1109/IRPS.2012.6241935\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The correlation of discrete gate and drain current fluctuations is revealed in nanoscaled SiON pFETs and nFETs, demonstrating that discrete trapping and detrapping events in the same single states are responsible of both ID and IG random telegraph noise (RTN). The high and low gate current IG-RTN levels are independent of temperature but the switching rates thermally activated indicating that the trapping and detrapping events are consistent with nonradiative multiphonon theory.\",\"PeriodicalId\":341663,\"journal\":{\"name\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"39\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2012.6241935\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241935","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs
The correlation of discrete gate and drain current fluctuations is revealed in nanoscaled SiON pFETs and nFETs, demonstrating that discrete trapping and detrapping events in the same single states are responsible of both ID and IG random telegraph noise (RTN). The high and low gate current IG-RTN levels are independent of temperature but the switching rates thermally activated indicating that the trapping and detrapping events are consistent with nonradiative multiphonon theory.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
