{"title":"用结合绝缘体上硅(SOI)衬底测定铟和锑在硅中的固溶极限","authors":"A. Sato, K. Suzuki, H. Horie, T. Sugii","doi":"10.1109/ICMTS.1995.513984","DOIUrl":null,"url":null,"abstract":"An SOI substrate enables us to obtain high, even distribution of impurity concentration in ion implantation with subsequent high-temperature annealing. We evaluated the solid solubility limit of In and Sb in Si by Hall measurement. We found that the solid solubility of In was constant at 1.5/spl times/10/sup 18/ cm/sup -3/ between 800/spl deg/C and 1100/spl deg/C, while that of Sb varied from 7/spl times/10/sup 19/ cm/sup -3/ at 800/spl deg/C to 1.2/spl times/10/sup 20/ cm/sup -3/ at 1100/spl deg/C, both of which were higher than previously reported values.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Determination of solid solubility limit of In and Sb in Si using bonded silicon-on-insulator (SOI) substrate\",\"authors\":\"A. Sato, K. Suzuki, H. Horie, T. Sugii\",\"doi\":\"10.1109/ICMTS.1995.513984\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An SOI substrate enables us to obtain high, even distribution of impurity concentration in ion implantation with subsequent high-temperature annealing. We evaluated the solid solubility limit of In and Sb in Si by Hall measurement. We found that the solid solubility of In was constant at 1.5/spl times/10/sup 18/ cm/sup -3/ between 800/spl deg/C and 1100/spl deg/C, while that of Sb varied from 7/spl times/10/sup 19/ cm/sup -3/ at 800/spl deg/C to 1.2/spl times/10/sup 20/ cm/sup -3/ at 1100/spl deg/C, both of which were higher than previously reported values.\",\"PeriodicalId\":432935,\"journal\":{\"name\":\"Proceedings International Conference on Microelectronic Test Structures\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1995.513984\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Determination of solid solubility limit of In and Sb in Si using bonded silicon-on-insulator (SOI) substrate
An SOI substrate enables us to obtain high, even distribution of impurity concentration in ion implantation with subsequent high-temperature annealing. We evaluated the solid solubility limit of In and Sb in Si by Hall measurement. We found that the solid solubility of In was constant at 1.5/spl times/10/sup 18/ cm/sup -3/ between 800/spl deg/C and 1100/spl deg/C, while that of Sb varied from 7/spl times/10/sup 19/ cm/sup -3/ at 800/spl deg/C to 1.2/spl times/10/sup 20/ cm/sup -3/ at 1100/spl deg/C, both of which were higher than previously reported values.
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