通过发射极效率的横向变化增加功率器件结端的鲁棒性

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694435

H. Schulze, J. Bauer, E. Falck, F. Niedernostheide, J. Biermann, T. Dutemeyer, O. Humbel, A. Schieber

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引用次数: 10

摘要

一种新的二极管技术，称为发射极控制(EC)-HDR(高动态鲁棒性)，可以显着增强开关安全操作区域。这是第一次提出用于这一重大改进的概念。同样的原理已应用于绝缘栅双极晶体管(IGBT)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Increase of the Robustness of the junction terminations of power devices by a lateral variation of the Emitter Efficiency

A new diode technology called Emitter Controlled (EC)-HDR (High Dynamic Robustness) that allows a pronounced enhancement in switching safe-operating area has been developed. For the first time, the concept used for this drastic improvement is presented. The same principle has been applied to the Insulated Gate Bipolar Transistor (IGBT).

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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