{"title":"Zynq UltraScale Plus XCZU9EG FPGA上质子诱导总电离剂量1mrad (Si)增加时SEL灵敏度的变化趋势","authors":"R. Koga, S. Davis, D. Mabry","doi":"10.1109/REDW51883.2020.9325854","DOIUrl":null,"url":null,"abstract":"Experimental observation of the trend in SEL sensitivity was made for increasing proton induced TID/DD. The test samples were the Zynq Ultrascale Plus XCZU9EG FPGAs. The cumulative TID on one sample was near 1 Mrad(Si).","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Trend in Measured SEL Sensitivity with Increasing Proton Induced Total Ionizing Dose to1Mrad(Si) on Zynq UltraScale Plus XCZU9EG FPGA\",\"authors\":\"R. Koga, S. Davis, D. Mabry\",\"doi\":\"10.1109/REDW51883.2020.9325854\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental observation of the trend in SEL sensitivity was made for increasing proton induced TID/DD. The test samples were the Zynq Ultrascale Plus XCZU9EG FPGAs. The cumulative TID on one sample was near 1 Mrad(Si).\",\"PeriodicalId\":127384,\"journal\":{\"name\":\"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW51883.2020.9325854\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW51883.2020.9325854","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
实验观察了质子诱导的TID/DD增加对SEL敏感性的变化趋势。测试样品为Zynq Ultrascale Plus XCZU9EG fpga。一个样品的累积TID接近1 Mrad(Si)。
Trend in Measured SEL Sensitivity with Increasing Proton Induced Total Ionizing Dose to1Mrad(Si) on Zynq UltraScale Plus XCZU9EG FPGA
Experimental observation of the trend in SEL sensitivity was made for increasing proton induced TID/DD. The test samples were the Zynq Ultrascale Plus XCZU9EG FPGAs. The cumulative TID on one sample was near 1 Mrad(Si).