基于智能电源技术的浮式井可靠性分析锁存测试结构

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292885

M. Puig Vidal, M. Bafleur, J. Buxo, G. Sarrabayrouse

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引用次数: 2

摘要

自隔离CMOS双扩散MOS (DMOS)技术是一种经济高效的智能电源技术。研究表明，采用浮井概念作为锁存保护，自隔离CMOS/DMOS技术具有成本效益和可靠性。就静态和动态锁存以及MOS晶体管性能而言，这一概念的可靠性得到了证明。

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Latch-up test structures for reliability analysis of a floating well based smart power technology

Self-isolated CMOS double-diffusion MOS (DMOS) technology is a cost effective smart power technology. It is shown that, using a floating well concept as latch-up protection, self-isolated CMOS/DMOS technology can be made cost effective and reliable. The reliability of this concept is demonstrated as far as both static and dynamic latch-up is concerned, as well as with regard to MOS transistor performance.<>

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ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

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