金属-氧化物-半导体场效应晶体管用氢化金刚石的高k氧化物[特邀]

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2019-03-01 DOI:10.1109/ICMTS.2019.8730974

Y. Koide

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引用次数: 0

摘要

由于其优异的内在特性，金刚石在大功率电子器件、紫外线探测器、生物传感器、耐高温气体传感器等方面的应用前景广阔。本文概述了用于金属氧化物半导体(MOS)电容器和MOS场效应晶体管(mosfet)的氢化金刚石(H-diamond)上的高k氧化物。总结和讨论了h -金刚石MOS电容器和mosfet的制备工艺、氧化物/ h -金刚石异质界面的能带结构以及MOS和mosfet的电学性能。采用原子层沉积(ALD)和溅射沉积(SD)技术制备了高k氧化物绝缘体。讨论了高钾氧化物$\mathbf{ALD}-\mathbf{Al}_{2}\mathbf{O}{3}、\mathbf{ALD}-\mathbf{HfO}_{2}、\mathbf{ALD}-\mathbf{HfO}2/\mathbf{ALD}-\mathbf{Al_{2}O}{3}$多层、$\mathbf{SD}-\mathbf{HfO} {2}/\mathbf{ALD}-\mathbf{HfO} {2}$ mathbf{2}/\mathbf{HfO} {2}$ mathbf{2}}$ mathbf{2}}$ mathbf{3}$双层、$ mathbf{SD} / TiO_{2}/ Al_{2}}$ mathbf{3}$双层和ALD $\mathbf{TiO_{2}/ Al_{2}}$ mathbf{3}$双层的h-金刚石MOS电容器的电学性能。对其电容电压特性的分析表明，$\mathbf{ALD}-\mathbf{Al}_{2}\mathbf{O}_{3}/\mathbf{H}$ -diamond和$\mathbf{SD}-\mathbf{HfO}_{2}/\mathbf{HfO}_{2}/\mathbf{H}-$ diamond具有较低的固定电荷密度和捕获电荷密度。$\mathbf{ALD-TiO_{2}/ALD-Al_{2}}\mathbf{O}{3}$双分子层的k值为27.2，高于其他氧化物绝缘子。漏源电流与电压曲线显示出$\mathbf{ALD}-\mathbf{Al_{2}\ mathbf{O}_{3}}/\mathbf{H}$ -菱形、SD- $\mathbf{EfO}_{2}/\mathbf{ALD}-\mathbf{HfO}_{2}/\mathbf{H}$ -菱形、$\mathbf{ALD}-\mathbf{TiO}_{2}/\mathbf{ALD}- \mathbf{A}1_{2}\mathbf{O} {3}/\mathbf{H}$ -菱形mosfet明显的关断和p型沟道特性。了解高k氧化物/ h-金刚石MOS电子器件的制备工艺和电学特性，对制备高性能h-金刚石MOS电容器和mosfet具有重要意义。

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High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited]

Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high-k oxides on hydrogenated-diamond (H-diamond) for metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. High-k oxide insulators are deposited using atomic layer deposition (ALD) and sputtering deposition (SD) techniques. Electrical properties of the H-diamond MOS capacitors with high-k oxides of $\mathbf{ALD}-\mathbf{Al}_{2}\mathbf{O}_{3}, \mathbf{ALD}-\mathbf{HfO}_{2},\mathbf{ALD}-\mathbf{HfO}2/\mathbf{ALD}-\mathbf{Al_{2}O}_{3}$ multilayer, $\mathbf{SD}-\mathbf{HfO}_{2}/\mathbf{ALD}-\mathbf{HfO}_{2}$ bilayer, $\mathbf{SD-TiO_{2}/ALD-Al_{2}\mathrm{O}_{3}}$ bilayer, and ALD $\mathbf{TiO_{2}/ALD-Al_{2}O_{3}}$ bilayer are discussed. Analyses for capacitance-voltage characteristics of them show that there are low fixed and trapped charge densities for the $\mathbf{ALD}-\mathbf{Al}_{2}\mathbf{O}_{3}/\mathbf{H}$ -diamond and $\mathrm{SD}-\mathbf{HfO}_{2}/\mathbf{ALD}-\mathbf{HfO}_{2}/\mathbf{H}-$ diamond MOS capacitors. The k value of 27.2 for the $\mathbf{ALD-TiO_{2}/ALD-Al_{2}}\mathbf{O}_{3}$ bilayer is larger than those of the other oxide insulators. Drain-source current versus voltage curves show distinct pitch-off and p-type channel characteristics for the $\mathbf{ALD}-\mathbf{Al_{2}\mathrm{O}_{3}}/\mathbf{H}$ -diamond, SD- $\mathbf{EfO}_{2}/\mathbf{ALD}-\mathbf{HfO}_{2}/\mathbf{H}$ -diamon d, and $\mathbf{ALD}-\mathbf{TiO}_{2}/\mathbf{ALD}- \mathbf{A}1_{2}\mathbf{O}_{3}/\mathbf{H}$ -diamond MOSFETs. Understanding of fabrication routines and electrical properties for the high-k oxide/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOSFETs.

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2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)

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