A direct, reliable, measurement-based technique for the extraction of an on-chip HBT dummy structure equivalent circuit

A reliable measurement-based technique is introduced to extract dummy structure modeling parameters which are used to deembed the intrinsic S-parameters of an on-chip heterojunction bipolar transistor (HBT) device. The entire parameter set of the dummy structure equivalent circuit is obtained by direct processing of the measurement data. This avoids the need for computer optimization which often produces unrealistic results. An example is given to demonstrate the method, and the structure model is applied to reveal the intrinsic device S-parameters of an HBT.<>