BiCMOS技术中双极SPICE模型参数的预确定方法

S. Aggarwal, A. Juge
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引用次数: 0

摘要

为了最大限度地减少测量工作量,提出了一种方法,用于获得BiCMOS技术中不同尺寸双极器件的SPICE(以IC为重点的仿真程序)模型参数。该方法基于将终端电流和电容划分为与面积和周长相关的单元参数。所有设备的模型参数均按照可控精度指标提供。这种方法允许预先确定尚未制造的设备的模型参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A methodology for pre-determination of bipolar SPICE model parameters in BiCMOS technology
In order to minimize measurement efforts, a methodology is proposed for obtaining SPICE (simulation program with IC emphasis) model parameters for bipolar devices of varying sizes available in a BiCMOS technology. The methodology is based on the partitioning of terminal currents and capacitances into area- and perimeter-dependent unit parameters. Model parameters are provided for all devices in a manner consistent with controllable accuracy indicators. This approach allows pre-determination of the model parameters for the devices which are yet to be fabricated.<>
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