{"title":"BiCMOS技术中双极SPICE模型参数的预确定方法","authors":"S. Aggarwal, A. Juge","doi":"10.1109/ICMTS.1993.292900","DOIUrl":null,"url":null,"abstract":"In order to minimize measurement efforts, a methodology is proposed for obtaining SPICE (simulation program with IC emphasis) model parameters for bipolar devices of varying sizes available in a BiCMOS technology. The methodology is based on the partitioning of terminal currents and capacitances into area- and perimeter-dependent unit parameters. Model parameters are provided for all devices in a manner consistent with controllable accuracy indicators. This approach allows pre-determination of the model parameters for the devices which are yet to be fabricated.<<ETX>>","PeriodicalId":123048,"journal":{"name":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A methodology for pre-determination of bipolar SPICE model parameters in BiCMOS technology\",\"authors\":\"S. Aggarwal, A. Juge\",\"doi\":\"10.1109/ICMTS.1993.292900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to minimize measurement efforts, a methodology is proposed for obtaining SPICE (simulation program with IC emphasis) model parameters for bipolar devices of varying sizes available in a BiCMOS technology. The methodology is based on the partitioning of terminal currents and capacitances into area- and perimeter-dependent unit parameters. Model parameters are provided for all devices in a manner consistent with controllable accuracy indicators. This approach allows pre-determination of the model parameters for the devices which are yet to be fabricated.<<ETX>>\",\"PeriodicalId\":123048,\"journal\":{\"name\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1993.292900\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1993.292900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A methodology for pre-determination of bipolar SPICE model parameters in BiCMOS technology
In order to minimize measurement efforts, a methodology is proposed for obtaining SPICE (simulation program with IC emphasis) model parameters for bipolar devices of varying sizes available in a BiCMOS technology. The methodology is based on the partitioning of terminal currents and capacitances into area- and perimeter-dependent unit parameters. Model parameters are provided for all devices in a manner consistent with controllable accuracy indicators. This approach allows pre-determination of the model parameters for the devices which are yet to be fabricated.<>