基于四点探针技术的AlGaN/GaN HEMT薄片电阻测量方法

Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI:10.1109/ICMTS.2015.7106134

J. Lehmann, C. Leroux, G. Reimbold, M. Charles, A. Torres, E. Morvan, Y. Baines, G. Ghibaudo, E. Bano

{"title":"基于四点探针技术的AlGaN/GaN HEMT薄片电阻测量方法","authors":"J. Lehmann, C. Leroux, G. Reimbold, M. Charles, A. Torres, E. Morvan, Y. Baines, G. Ghibaudo, E. Bano","doi":"10.1109/ICMTS.2015.7106134","DOIUrl":null,"url":null,"abstract":"In this paper, we present a new method of sheet resistance measurement on AlGaN/GaN wafers. Such measurements are useful for an easy monitoring of AlGaN/GaN epitaxy. Measurements were obtained by adapting the four-point probe technique to AlGaN/GaN wafers. This method is used today in the 200mm GaN-on-Si fabrication line at the CEA-LETI with a standard deviation of 2% on the sheet resistance measurement.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique\",\"authors\":\"J. Lehmann, C. Leroux, G. Reimbold, M. Charles, A. Torres, E. Morvan, Y. Baines, G. Ghibaudo, E. Bano\",\"doi\":\"10.1109/ICMTS.2015.7106134\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a new method of sheet resistance measurement on AlGaN/GaN wafers. Such measurements are useful for an easy monitoring of AlGaN/GaN epitaxy. Measurements were obtained by adapting the four-point probe technique to AlGaN/GaN wafers. This method is used today in the 200mm GaN-on-Si fabrication line at the CEA-LETI with a standard deviation of 2% on the sheet resistance measurement.\",\"PeriodicalId\":177627,\"journal\":{\"name\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2015.7106134\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106134","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

本文提出了一种测量AlGaN/GaN晶圆片电阻的新方法。这样的测量对于易于监测AlGaN/GaN外延是有用的。采用四点探针技术对AlGaN/GaN晶圆进行测量。该方法目前用于CEA-LETI的200mm GaN-on-Si制造线上，薄片电阻测量的标准偏差为2%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

In this paper, we present a new method of sheet resistance measurement on AlGaN/GaN wafers. Such measurements are useful for an easy monitoring of AlGaN/GaN epitaxy. Measurements were obtained by adapting the four-point probe technique to AlGaN/GaN wafers. This method is used today in the 200mm GaN-on-Si fabrication line at the CEA-LETI with a standard deviation of 2% on the sheet resistance measurement.

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Proceedings of the 2015 International Conference on Microelectronic Test Structures

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