{"title":"迈向忆阻器统一模型的发展:电荷-通量关系","authors":"A.N. Pranavi, Tejendra Dixit, K. P. Pradhan","doi":"10.1109/icee50728.2020.9777013","DOIUrl":null,"url":null,"abstract":"Memristors have garnered the great attention of the scientific community due to the immense scope in memory technology and neuromorphic computing. Like any other established devices viz. transistor, LEDs, etc. modeling of memristors is needed to develop a complete understanding of the device functionality. This becomes a major asset while constructing memristive circuits more precisely. There are several models developed to represent the memristor, which helped to understand its functioning with different device control parameters like scaling and exponential factors, input voltage, frequency, etc. In this paper, some models for memristor have been demonstrated using analytical simulations.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Towards the Development of Unified Models for Memristors: Charge-Flux Relationship\",\"authors\":\"A.N. Pranavi, Tejendra Dixit, K. P. Pradhan\",\"doi\":\"10.1109/icee50728.2020.9777013\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Memristors have garnered the great attention of the scientific community due to the immense scope in memory technology and neuromorphic computing. Like any other established devices viz. transistor, LEDs, etc. modeling of memristors is needed to develop a complete understanding of the device functionality. This becomes a major asset while constructing memristive circuits more precisely. There are several models developed to represent the memristor, which helped to understand its functioning with different device control parameters like scaling and exponential factors, input voltage, frequency, etc. In this paper, some models for memristor have been demonstrated using analytical simulations.\",\"PeriodicalId\":436884,\"journal\":{\"name\":\"2020 5th IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"135 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 5th IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icee50728.2020.9777013\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee50728.2020.9777013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Towards the Development of Unified Models for Memristors: Charge-Flux Relationship
Memristors have garnered the great attention of the scientific community due to the immense scope in memory technology and neuromorphic computing. Like any other established devices viz. transistor, LEDs, etc. modeling of memristors is needed to develop a complete understanding of the device functionality. This becomes a major asset while constructing memristive circuits more precisely. There are several models developed to represent the memristor, which helped to understand its functioning with different device control parameters like scaling and exponential factors, input voltage, frequency, etc. In this paper, some models for memristor have been demonstrated using analytical simulations.