迈向忆阻器统一模型的发展:电荷-通量关系

A.N. Pranavi, Tejendra Dixit, K. P. Pradhan
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引用次数: 0

摘要

忆阻器由于在记忆技术和神经形态计算方面的巨大应用范围而引起了科学界的极大关注。像任何其他已建立的器件(如晶体管、led等)一样,需要对忆阻器进行建模,以全面了解器件的功能。在更精确地构建忆阻电路时,这成为一个重要的资产。有几个模型被开发来表示忆阻器,这有助于理解它在不同的设备控制参数下的功能,如缩放和指数因子,输入电压,频率等。本文用分析仿真的方法对一些忆阻器模型进行了验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Towards the Development of Unified Models for Memristors: Charge-Flux Relationship
Memristors have garnered the great attention of the scientific community due to the immense scope in memory technology and neuromorphic computing. Like any other established devices viz. transistor, LEDs, etc. modeling of memristors is needed to develop a complete understanding of the device functionality. This becomes a major asset while constructing memristive circuits more precisely. There are several models developed to represent the memristor, which helped to understand its functioning with different device control parameters like scaling and exponential factors, input voltage, frequency, etc. In this paper, some models for memristor have been demonstrated using analytical simulations.
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