用于食品安全筛选的512×576 65纳米CMOS ISFET传感器,灵敏度为123.8 mV/pH, pH分辨率为0.01

Yu Jiang, X. Liu, Tran Chien Dang, Mei Yan, Hao Yu, Jui-Cheng Huang, Cheng-Hsiang Hsieh, Tung-Tsun Chen
{"title":"用于食品安全筛选的512×576 65纳米CMOS ISFET传感器,灵敏度为123.8 mV/pH, pH分辨率为0.01","authors":"Yu Jiang, X. Liu, Tran Chien Dang, Mei Yan, Hao Yu, Jui-Cheng Huang, Cheng-Hsiang Hsieh, Tung-Tsun Chen","doi":"10.1109/VLSIT.2016.7573440","DOIUrl":null,"url":null,"abstract":"Internet-of-things (IoTs) need a common CMOS technology platform to build multi-modal sensor on chip. This paper shows a CMOS-based ion-sensitive field effect transistor (ISFET) pH sensor for food safety screening. A low-power high-gain subthreshold trans-impedance amplifier is integrated with an integration capacitor to form a readout scheme by pH-to-time-to-voltage conversion (pH-TVC), which greatly improves sensitivity of a single ISFET pixel. Fabricated in standard CMOS 65-nm process with the smallest pixel pitch of 4.4 μm, a 123.8 mV/pH sensitivity is achieved compared to traditional source-follower readout with a 6.3 mV/pH sensitivity. E. coli experiment further shows its great potential to monitor hygiene condition for food safety with a 0.01 pH resolution.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"52 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A 512×576 65-nm CMOS ISFET sensor for food safety screening with 123.8 mV/pH sensitivity and 0.01 pH resolution\",\"authors\":\"Yu Jiang, X. Liu, Tran Chien Dang, Mei Yan, Hao Yu, Jui-Cheng Huang, Cheng-Hsiang Hsieh, Tung-Tsun Chen\",\"doi\":\"10.1109/VLSIT.2016.7573440\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Internet-of-things (IoTs) need a common CMOS technology platform to build multi-modal sensor on chip. This paper shows a CMOS-based ion-sensitive field effect transistor (ISFET) pH sensor for food safety screening. A low-power high-gain subthreshold trans-impedance amplifier is integrated with an integration capacitor to form a readout scheme by pH-to-time-to-voltage conversion (pH-TVC), which greatly improves sensitivity of a single ISFET pixel. Fabricated in standard CMOS 65-nm process with the smallest pixel pitch of 4.4 μm, a 123.8 mV/pH sensitivity is achieved compared to traditional source-follower readout with a 6.3 mV/pH sensitivity. E. coli experiment further shows its great potential to monitor hygiene condition for food safety with a 0.01 pH resolution.\",\"PeriodicalId\":129300,\"journal\":{\"name\":\"2016 IEEE Symposium on VLSI Technology\",\"volume\":\"52 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2016.7573440\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573440","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

物联网需要一个通用的CMOS技术平台来构建芯片上的多模态传感器。介绍了一种用于食品安全筛选的基于cmos的离子敏感场效应晶体管(ISFET) pH传感器。将低功率高增益亚阈值反阻抗放大器与集成电容集成,通过ph -时间-电压转换(pH-TVC)形成读出方案,大大提高了ISFET单个像素的灵敏度。采用标准的CMOS 65纳米工艺制作,最小像素间距为4.4 μm,与传统的6.3 mV/pH灵敏度相比,灵敏度为123.8 mV/pH。大肠杆菌实验进一步显示了其在0.01 pH分辨率下监测食品安全卫生状况的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 512×576 65-nm CMOS ISFET sensor for food safety screening with 123.8 mV/pH sensitivity and 0.01 pH resolution
Internet-of-things (IoTs) need a common CMOS technology platform to build multi-modal sensor on chip. This paper shows a CMOS-based ion-sensitive field effect transistor (ISFET) pH sensor for food safety screening. A low-power high-gain subthreshold trans-impedance amplifier is integrated with an integration capacitor to form a readout scheme by pH-to-time-to-voltage conversion (pH-TVC), which greatly improves sensitivity of a single ISFET pixel. Fabricated in standard CMOS 65-nm process with the smallest pixel pitch of 4.4 μm, a 123.8 mV/pH sensitivity is achieved compared to traditional source-follower readout with a 6.3 mV/pH sensitivity. E. coli experiment further shows its great potential to monitor hygiene condition for food safety with a 0.01 pH resolution.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信