采用90nm BiCMOS技术的SiGe HBTs通过减少Rb和Ccb寄生，展示了300GHz/420GHz的fT/fMAX

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI:10.1109/BCTM.2013.6798182

R. Camillo-Castillo, Q. Liu, J. Adkisson, M. Khater, P. Gray, V. Jain, R. Leidy, J. Pekarik, J. Gambino, B. Zetterlund, C. Willets, C. Parrish, S. Engelmann, A. Pyzyna, P. Cheng, D. Harame

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引用次数: 13

摘要

缩放SiGe hbt的fT和fMAX是相当具有挑战性的，因为提高这些数值的物理设备要求相反。在本文中，毫秒退火技术，低温硅化和低温接触工艺被证明是有效的降低基电阻。这些工艺与解决集电极基电容的新方法相结合，可以生产出工作频率为300/420GHz fT/fMAX的高性能SiGe HBT器件。这是首次报道fMAX超过400GHz的90nm SiGe BICMOS。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics

Scaling both the fT and the fMAX of SiGe HBTs is quite challenging due to the opposing physical device requirements for improving these figures of merit. In this paper, millisecond anneal techniques, low temperature silicide and low temperature contact processes are shown to be effective in reducing the base resistance. These processes when combined with a novel approach to address the collector-base capacitance are shown to produce high performance SiGe HBT devices which demonstrate operating frequencies of 300/420GHz fT/fMAX. This is the first report of 90nm SiGe BICMOS with an fMAX exceeding 400GHz.

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2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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