sic - mosfet的阈值电压与导通电阻权衡的突破

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694397

M. Furuhashi, T. Tanioka, Y. Ebiike, E. Suekawa, Y. Tarui, S. Sakai, N. Yutani, N. Miura, M. Imaizumi, S. Yamakawa, T. Oomori

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引用次数: 7

摘要

栅极氧化物氮化后进行湿氧化，使4H-SiC MOSFET的阈值电压大幅提高，但沟道有效迁移率没有显著降低。阈值电压的增加取决于湿氧化条件，湿氧化改善了阈值电压和比导通电阻之间的权衡。我们使用上述方法制备了阈值电压为5.11 V，比导通电阻为5.2 mΩcm2的600 V 4H-SiC mosfet。通过HTGB测试证实了sic - mosfet阈值电压的稳定性。

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Breakthrough in trade-off between threshold voltage and specific on-resistance of SiC-MOSFETs

The threshold voltage of 4H-SiC MOSFET increases drastically by performing wet oxidation after nitridation of gate oxide without significant decrease in the channel effective mobility. The increment of the threshold voltage depends on the wet oxidation conditions, and wet oxidation improves the trade-off between the threshold voltage and the specific on-resistance. We fabricated 600 V 4H-SiC MOSFETs with a threshold voltage of 5.11 V and a specific on-resistance of 5.2 mΩcm2 using the procedure above. The stability of the threshold voltage for the SiC-MOSFETs was confirmed by a HTGB test.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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