氮化层电荷位移及其对先进闪存器件阈值电压不稳定性影响的实验研究

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378061

G. Tao, S. Nath, C. Ouvrard, H. Chauveau, D. Dormans, R. Verhaar

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引用次数: 3

摘要

采用栅极应力测量方法，实验研究了ONO叠层氮化层电荷位移的影响。电荷的再分配遵循普尔-弗伦克尔传导机制。然而，在缩放设备上的测量显示出显著的随机电报噪声。在未来的规模化设备中，噪音将更加明显。

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Experimental Study of Charge Displacement in Nitride Layer and its Effect on Threshold Voltage Instability of Advanced Flash Memory Devices

The effect of charge displacement in nitride layer of ONO stack in scaled flash cells are experimentally studied by using gate stress measurements. The redistribution of charge is found to follow Poole-Frenkel conduction mechanisms. However, the measurements on scaled devices show significant random telegraph noise. The noise will be even more pronounced in future scaled devices.

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2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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