{"title":"用于HVM 7nm节点光刻的激光等离子体EUV光源:可用性进展和功率缩放前景","authors":"I. Fomenkov","doi":"10.1117/12.2515017","DOIUrl":null,"url":null,"abstract":"In this paper, we provide an overview of state-of-the-art technologies for laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source performance to enable high volume manufacturing of the N7 node and beyond. Source architecture enabling stable and reliable performance at 250 Watts EUV power, and the technical challenges for scaling of key source parameters and subsystems toward 500W will be described. Improvements in availability of droplet generation and the performance of critical subsystems that contribute to Collector lifetime toward the one tera-pulse level, will be shown. Finally, we will describe current research activities and provide a perspective for LPP EUV sources towards the future ASML Scanners.","PeriodicalId":147291,"journal":{"name":"Extreme Ultraviolet (EUV) Lithography X","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Laser produced plasma EUV sources for HVM 7nm node lithography: progress in availability and prospects of power scaling\",\"authors\":\"I. Fomenkov\",\"doi\":\"10.1117/12.2515017\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we provide an overview of state-of-the-art technologies for laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source performance to enable high volume manufacturing of the N7 node and beyond. Source architecture enabling stable and reliable performance at 250 Watts EUV power, and the technical challenges for scaling of key source parameters and subsystems toward 500W will be described. Improvements in availability of droplet generation and the performance of critical subsystems that contribute to Collector lifetime toward the one tera-pulse level, will be shown. Finally, we will describe current research activities and provide a perspective for LPP EUV sources towards the future ASML Scanners.\",\"PeriodicalId\":147291,\"journal\":{\"name\":\"Extreme Ultraviolet (EUV) Lithography X\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extreme Ultraviolet (EUV) Lithography X\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2515017\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extreme Ultraviolet (EUV) Lithography X","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2515017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Laser produced plasma EUV sources for HVM 7nm node lithography: progress in availability and prospects of power scaling
In this paper, we provide an overview of state-of-the-art technologies for laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source performance to enable high volume manufacturing of the N7 node and beyond. Source architecture enabling stable and reliable performance at 250 Watts EUV power, and the technical challenges for scaling of key source parameters and subsystems toward 500W will be described. Improvements in availability of droplet generation and the performance of critical subsystems that contribute to Collector lifetime toward the one tera-pulse level, will be shown. Finally, we will describe current research activities and provide a perspective for LPP EUV sources towards the future ASML Scanners.
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