用CBCM法测量MOSFET C-V曲线变化

2009 IEEE International Conference on Microelectronic Test Structures Pub Date : 2009-04-14 DOI:10.1109/ICMTS.2009.4814615

K. Tsuji, K. Terada, T. Nakamoto, T. Tsunomura, A. Nishida

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引用次数: 9

摘要

在测试电路中，包括cbcm(电荷基电容测量)的单元以矩阵形状排列，用于测量MOSFET电容变化。通过调整测试电路的偏置条件，可以得到许多mosfet的C-V曲线。此外，从估计的C-V曲线变化中提取阈值电压的变化。所得的阈值电压变化与由电流-电压特性得到的值接近。

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Measurement of MOSFET C-V Curve Variation Using CBCM Method

The test circuit, in which the cells including CBCMs (Charge-Based Capacitance Measurements) are arrayed in matrix shape, is developed to measure MOSFET capacitance variation. By adjusting the bias condition of the test circuit, it is able to obtain C-V curves for many MOSFETs. Additionally, a variation of threshold voltage is extracted from the estimated C-V curve variation. The obtained threshold voltage variations are close to those which are obtained from current-voltage characteristics.

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来源期刊

2009 IEEE International Conference on Microelectronic Test Structures

CiteScore

0.80

自引率

0.00%

发文量